HRC0203B Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying

HRC0203B
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Repetitive peak reverse
V *1
RRM
voltage
Average rectified current
Non-Repetitive peak
forward surge current
I
*1
o
I ^*2
FSM
Junction temperature
Tj
Storage temperature
Tstg
Note 1. See from Fig.3 to Fig.5
2. 10msec sine wave 1 pulse
Value
30
200
3
125
-55Å`+125
Unit
V
mA
A
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Forward voltage
V_F
— — 0.52 V
I_F = 200 mA
Reverse current
I_R
— — 10 µA V_R = 30V
Thermal resistance R_th(j-a)
— 500 — °C/W Polyimide board^*1
Note 1. Polyimide board
20hx15wx0.8t
1.5
Unit: mm
1.5
2