HAT2045T Datasheet, PDF (3/5 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown V_(BR)DSS
28
voltage
Gate to source breakdown V_(BR)GSS
±12
voltage
Gate to source leak current I_GSS
—
Zero gate voltege drain
I _DSS
—
current
Gate to source cutoff voltage V_GS(off)
0.4
Static drain to source on state R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance |y_fs|
8
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance Crss
—
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward V_DF
—
voltage
Body–drain diode reverse t_rr
—
recovery time
Note: 4. Pulse test
HAT2045T
Typ
Max
Unit
—
—
V
—
—
V
—
±10
µA
—
1
µA
—
1.4
V
0.020 0.025 Ω
0.027 0.037 Ω
13
—
S
680
—
pF
240
—
pF
170
—
pF
12
—
ns
110
—
ns
90
—
ns
100
—
ns
0.85 1.1
V
40
—
ns
Test Conditions
I_D = 10mA, V_GS = 0
I_G = ±100µA, V_DS = 0
V_GS = ±10V, V_DS = 0
V_DS = 28 V, V_GS = 0
V_DS = 10V, I _D = 1mA
I_D = 3A, V_GS = 4V ^Note4
I_D = 3A, V_GS = 2.5V ^Note4
I_D = 3A, V_DS = 10V ^Note4
V_DS = 10V
V_GS = 0
f = 1MHz
V_GS = 4V, I_D = 3A
V_DD ≅ 10V
IF =6.0A, V_GS = 0 ^Note4
IF = 6.0A, V_GS = 0
diF/ dt =20A/µs
3