HAT2045T Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2045T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V_DSS
28
V
Gate to source voltage
V_GSS
±12
V
Drain current
I_D
6.0
A
Drain peak current
I Note1
D(pulse)
48
A
Body-drain diode reverse drain current I_DR
6.0
A
Channel dissipation
Pch ^Note2
1.0
W
Channel dissipation
Pch ^Note3
1.5
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
2