HAT2043R Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
50
100
150
200
Ambient Temperature Ta (°C)
HAT2043R
Maximum Safe Operation Area
100
10 µs
100 µs
30
10
3
1
0.3
PW ^{1 ms}
DC _Operation
Operation in
this area is
(PW
<
= ₁₀
1^N₀^o_s^te_{) 5}
ms
0.1 ^{limited by R DS(on)}
0.03 _{Ta = 25 °C}
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
20
10V
3.5 V
16
6V
Pulse Test
12
4V
8
2.5 V
4
V_GS = 2.0 V
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
20
V _DS = 10 V
16 ^{Pulse Test}
12
8
Tc = 75°C
4
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
3