HAT2043R Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2043R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V_DSS
30
V
Gate to source voltage
V_GSS
± 20
V
Drain current
I_D
8
A
Drain peak current
I Note1
D(pulse)
64
A
Body-drain diode reverse drain current I_DR
8
A
Channel dissipation
Pch ^Note2
2.0
W
Channel dissipation
Pch ^Note3
3.0
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 30
Gate to source leak current
I _GSS
—
Zero gate voltege drain current
I _DSS
—
Gate to source cutoff voltage
V_GS(off)
1.0
Static drain to source on state
R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance
|y_fs|
9
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg
—
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t _rr
—
Note: 4.
Pulse test
Typ Max Unit
—
—
V
—
± 0.1 µA
—
1
µA
—
2.5 V
0.016 0.022 Ω
0.022 0.029 Ω
14
—
S
1170 —
pF
390 —
pF
240 —
pF
32
—
nc
22
—
nc
10
—
nc
32
—
ns
190 —
ns
85
—
ns
110 —
ns
0.84 1.09 V
35
—
ns
Test Conditions
I_D = 10 mA, V_GS = 0
V_GS = ± 20 V, V_DS = 0
V_DS = 30 V, V_GS = 0
V_DS = 10 V, I _D = 1 mA
I_D = 4 A, V_GS = 10 V ^Note4
I_D = 4 A, V_GS = 4 V ^Note4
I_D = 4 A, V_DS = 10 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1 MHz
V_DD = 10 V
V_GS = 10 V
I_D = 8 A
V_GS = 4 V, I_D = 4 A
V_DD ≅ 10 V
IF = 8 A, V_GS = 0 ^Note4
IF = 8 A, V_GS = 0
diF/ dt = 20 A/ µs
2