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HAF2011 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET Series Power Switching
◁
HAF2011(L),HAF2011(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit Test Conditions
Drain current
I D1
(25) —
—
A
VGS = 3.5V, VDS = 2V
Drain current
I D2
—
—
10
mA
VGS = 1.2V, VDS = 2V
Drain to source breakdown V(BR)DSS
60
—
—
V
voltage
ID = 10mA, VGS = 0
Gate to source breakdown V(BR)GSS
(16) —
—
V
voltage
IG = (300µA), VDS = 0
Gate to source breakdown V(BR)GSS
(–2.5) —
—
V
voltage
IG = (–100µA), VDS = 0
Gate to source leak current IGSS1
—
—
100
µA
VGS = 8V, VDS = 0
I GSS2
—
—
50
µA
VGS = 3.5V, VDS = 0
I GSS3
—
—
1
µA
VGS = 1.2V, VDS = 0
I GSS4
—
—
–100 µA
VGS = –2.4V, VDS = 0
Input current (shut down)
I GS(op)1
—
0.8
—
mA
VGS = 8V, VDS = 0
I GS(op)2
—
0.35 —
mA
VGS = 3.5V, VDS = 0
Zero gate voltege drain
I DSS
current
—
—
250
µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
1.0
—
—
25
2.25 V
33
mΩ
ID = 1mA, VDS = 10V
ID = 20A, VGS = 4V Note3
Static drain to source on state RDS(on)
—
15
20
mΩ
ID = 20A, VGS = 10V Note3
resistance
Forward transfer admittance |yfs|
Output capacitance
Coss
25
50
—
—
940
—
S
ID = 20A, VDS = 10V Note3
pF
VDS = 10V , VGS = 0
f = 1 MHz
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body–drain diode forward VDF
voltage
—
(7.8) —
µs
ID = 5A, VGS = 5V
—
(64)
—
µs
RL = 6Ω
—
(19)
—
µs
—
(30)
—
µs
—
(0.85) —
V
IF = 40A, VGS = 0
Body–drain diode reverse trr
recovery time
—
()
—
ns
IF = 40A, VGS = 0
diF/ dt =50A/µs
Over load shut down
t os1
—
()
—
ms
VGS = 5V, VDD = 12V
operation time Note4
t os2
—
()
—
ms
VGS = 5V, VDD = 24V
Note: 3. Pulse test
4. Include the time shiff based on increasing of chennel temperature when operete under over load
condition.
3
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