HAF2011 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET Series Power Switching

HAF2011(L),HAF2011(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
V_DSS
V_GSS
V_GSS
I_D
I ^Note1
D(pulse)
I _DR
Pch ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate non shut down)
Shut down temperature
Gate operation voltage
Symbol
V_IH
V_IL
I _IH1
I _IH2
I _IL
I _IH(sd)1
I _IH(sd)2
T_sd
V_OP
Min
3.5
—
—
—
—
—
—
—
3.5
Typ
—
—
—
—
—
0.8
0.35
175
—
Ratings
60
16
–2.5
40
80
40
50
150
–55 to +150
Max Unit
—
V
1.2
V
100
µA
50
µA
1
µA
—
mA
—
mA
—
°C
12
V
Unit
V
V
V
A
A
A
W
°C
°C
Test Conditions
Vi = 8V, V_DS = 0
Vi = 3.5V, V_DS = 0
Vi = 1.2V, V_DS = 0
Vi = 8V, V_DS = 0
Vi = 3.5V, V_DS = 0
Channel temperature
2