HAF2005 Datasheet, PDF(3/6 Page) Hitachi Semiconductor – Silicon N Channel MOS FET Series Power Switching

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HAF2005 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET Series Power Switching

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HAF2005

Electrical Characteristics (Ta = 25Â°C)

Item

Symbol Min Typ Max Unit Test Conditions

Drain current

Drain to source breakdown

voltage

I D1

(25) â

VGS = 3.5V, VDS = 2V

I D2

VGS = 1.2V, VDS = 2V

V(BR)DSS

ID = 10mA, VGS = 0

Gate to source breakdown

voltage

V(BR)GSS (16)

IG = (300ÂµA), VDS = 0

Gate to source breakdown

voltage

V(BR)GSS (â2.5) â

IG = (â100ÂµA), VDS = 0

Gate to source leak current

I GSS1

I GSS2

I GSS3

I GSS4

Input current (shut down)

I GS(op)1

I GS(op)2

Zero gate voltege drain current IDSS

Gate to source cutoff voltage

VGS(off)

1.0

Static drain to source on state RDS(on) â

resistance

100 ÂµA

ÂµA

â100 ÂµA

0.8

0.35 â

250 ÂµA

2.25 V

mâ¦

VGS = 8V, VDS = 0

VGS = 3.5V, VDS = 0

VGS = 1.2V, VDS = 0

VGS = â2.4V, VDS = 0

VGS = 8V, VDS = 0

VGS = 3.5V, VDS = 0

VDS = 50 V, VGS = 0

ID = 1mA, VDS = 10V

ID = 20A, VGS = 4V Note3

Static drain to source on state RDS(on) â

mâ¦

ID = 20A, VGS = 10V Note3

resistance

Forward transfer admittance

|yfs|

ID = 20A, VDS = 10V Note3

Output capacitance

Coss â

940 â

VDS = 10V , VGS = 0

f = 1 MHz

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Bodyâdrain diode forward

voltage

t d(on)

(7.8) â

Âµs

ID = 20A, VGS = 5V

(64) â

Âµs

RL = 1.5â¦

t d(off)

(19) â

Âµs

(30) â

Âµs

VDF

(0.85) â

IF = 20A, VGS = 0

Bodyâdrain diode reverse

t rr

() â

IF = 20A, VGS = 0

recovery time

diF/ dt =50A/Âµs

Over load shut down

t os1

() â

VGS = 5V, VDD = 12V

operation time Note4

t os2

() â

VGS = 5V, VDD = 24V

Note: 3. Pulse test

4. Include the time shiff based on increasing of chennel temperature when operete under over load

condition.

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