HAF2005 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET Series Power Switching

HAF2005
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
V_DSS
V_GSS
V_GSS
I_D
I ^Note1
D(pulse)
I _DR
Pch ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Typical Operation Characteristics
Ratings
Unit
60
V
(16)
V
(–2.5)
V
40
A
80
A
40
A
30
W
150
°C
–55 to +150
°C
Item
Symbol Min Typ Max Unit Test Conditions
Input voltage
Input current
(Gate non shut down)
Input current
(Gate non shut down)
Shut down temperature
Gate operation voltage
V_IH
V_IL
I _IH1
I _IH2
I _IL
I _IH(sd)1
I _IH(sd)2
T_sd
V_op
3.5 — — V
— — 1.2 V
— — 100 µA Vi = 8V, V_DS = 0
— — 50 µA Vi = 3.5V, V_DS = 0
—— 1
µA Vi = 1.2V, V_DS = 0
— 0.8 — mA Vi = 8V, V_DS = 0
— 0.35 — mA Vi = 3.5V, V_DS = 0
— 175 — °C Channel temperature
3.5 — 12 V
2