HAF1002 Datasheet, PDF (3/5 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET Series Power Switching

HAF1002(L), HAF1002(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain current
Drain current
Drain to source breakdown
voltage
I _D1
I _D2
V_(BR)DSS
Gate to source breakdown
voltage
V_(BR)GSS+
Gate to source breakdown
voltage
V_{(BR)GSS–}
Gate to source leak current I_GSS+1
I _GSS+2
I _GSS+3
I _{GSS –}
Input current (shut down)
I _GS(op)1
I _GS(op)1
Zero gate voltege drain current I_DSS
Gate to source cutoff voltage V_GS(off)
Static drain to source on state R_DS(on)
resistance
Static drain to source on state R_DS(on)
resistance
Min
–7
—
–60
–16
3
—
—
—
—
—
—
—
–1.1
—
—
Forward transfer admittance |y_fs|
5
Output capacitance
Coss
—
Typ
Max
Unit
—
—
A
—
–10
mA
—
—
V
—
—
V
—
—
V
—
–100 µA
—
–50
µA
—
–1
µA
—
100
µA
–0.8 —
mA
–0.35 —
mA
—
–250 µA
—
–2.25 V
100
130
mΩ
70
90
mΩ
10
—
S
610
—
pF
Turn-on delay time
t _d(on)
—
7.5
—
µs
Rise time
t_r
—
36
—
µs
Turn-off delay time
t _d(off)
—
32
—
µs
Fall time
t_f
—
29
—
µs
Body–drain diode forward
V_DF
—
–1.0 —
V
voltage
Body–drain diode reverse
t _rr
recovery time
—
200
—
ns
Over load shut down
t _os1
—
3.7
—
ms
operation time ^Note4
t _os2
—
1
—
ms
Note: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
Test Conditions
V_GS = –3.5V, V_DS = –2V
V_GS = –1.2V, V_DS = –2V
I_D = –10mA, V_GS = 0
I_G = –100µA, V_DS = 0
I_G = 100µA, V_DS = 0
V_GS = –8V, V_DS = 0
V_GS = –3.5V, V_DS = 0
V_GS = –1.2V, V_DS = 0
V_GS = 2.4V, V_DS = 0
V_GS = –8V, V_DS = 0
V_GS = –3.5V, V_DS = 0
V_DS = –50 V, V_GS = 0
I_D = –1mA, V_DS = –10V
I_D = –7.5A, V_GS = –4V ^Note3
I_D = –7.5A
V_GS = –10V ^Note3
I_D = –7.5A, V_DS = –10V ^Note3
V_DS = –10V , V_GS = 0
f = 1 MHz
I_D = –7.5A, V_GS = –5V
R_L = 4Ω
I_F = –15A, V_GS = 0
I_F = –15A, V_GS = 0
diF/ dt =50A/µs
V_GS = –5V, V_DD = –12V
V_GS = –5V, V_DD = –24V
• See characteristics curve of HAF1001.
3