HAF1002 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET Series Power Switching

HAF1002(L), HAF1002(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS+
Gate to source voltage
V_{GSS –}
Drain current
I_D
Drain peak current
I Note1
D(pulse)
Body-drain diode reverse drain current I_DR
Channel dissipation
Pch ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Typical Operation Characteristics
Ratings
–60
–16
3
–15
–30
–15
50
150
–55 to +150
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Symbol
V_IH
V_IL
I _IH1
I _IH2
I _IL
I _IH(sd)1
I _IH(sd)2
T_sd
V_OP
Min
–3.5
—
—
—
—
—
—
—
–3.5
Typ
—
—
—
—
—
–0.8
–0.35
175
—
Max
—
–1.2
–100
–50
–1
—
—
—
–13
Unit
V
V
µA
µA
µA
mA
mA
°C
V
Unit
V
V
V
A
A
A
W
°C
°C
Test Conditions
Vi = –8V, V_DS = 0
Vi = –3.5V, V_DS = 0
Vi = –1.2V, V_DS = 0
Vi = –8V, V_DS = 0
Vi = –3.5V, V_DS = 0
Channel temperature
2