BB305M Datasheet, PDF (3/12 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB305M
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS 12
Gate1 to source breakdown V_(BR)G1SS +10
voltage
Gate2 to source breakdown V_(BR)G2SS ±10
voltage
Gate1 to source cutoff current I_G1SS
—
Gate2 to source cutoff current I_G2SS
—
Gate1 to source cutoff voltage V_G1S(off) 0.4
Gate2 to source cutoff voltage V_G2S(off) 0.4
Input capacitance
c _iss
2.3
Output capacitance
c _oss
1.1
Reverse transfer capacitance c_rss
—
Drain current
I_D(op) 1
10
I_D(op) 2
—
Forward transfer admittance |y_fs|1 23
|y_fs|2
—
Power gain
PG1 24
PG2 —
Noise figure
NF1 —
NF2 —
Typ Max Unit Test Conditions
—
—
V
I_D = 200µA, V_G1S = V_G2S = 0
—
—
V
I_G1 = +10µA, V_G2S = V_DS = 0
—
—
V
I_G2 = ±10µA, V_G1S = V_DS = 0
— +100 nA
— ±100 nA
— 1.0 V
— 1.0 V
2.8 3.5 pF
1.5 1.9 pF
0.017 0.04 pF
15 20 mA
13 — mA
28 — mS
28 — mS
28 — dB
28 — dB
1.4 1.9 dB
1.4 — dB
V_G1S = +9V, V_G2S = V_DS = 0
V_G2S = ±9V, V_G1S = V_DS = 0
V_DS = 5V, V_G2S = 4V, I_D = 100µA
V_DS = 5V, V_G1S = 5V, I_D = 100µA
V_DS = 5V, V_G1 = 5V
V_G2S =4V, R_G = 82kΩ
f = 1MHz
V_DS = 5V, V_G1 = 5V, V_G2S = 4V
R_G = 82kΩ
V_DS = 9V, V_G1 = 9V, V_G2S =6V
R_G = 220kΩ
V_DS = 5V, V_G1 = 5V, V_G2S =4V
R_G =82kΩ, f = 1kHz
V_DS = 9V, V_G1 = 9V, V_G2S =6V
R_G = 220kΩ, f = 1kHz
V_DS = 5V, V_G1 = 5V, V_G2S =4V
R_G = 82kΩ, f = 200MHz
V_DS = 9V, V_G1 = 9V, V_G2S =6V
R_G = 220kΩ, f = 200MHz
V_DS = 5V, V_G1 = 5V, V_G2S =4V
R_G = 82kΩ, f = 200MHz
V_DS = 9V, V_G1 = 9V, V_G2S =6V
R_G = 220kΩ, f = 200MHz
3