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BB305M Datasheet, PDF (1/12 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | |||
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BB305M
Build in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
ADE-208-607C (Z)
4th. Edition
May 1998
Features
⢠Build in Biasing Circuit; To reduce using parts cost & PC board space.
⢠Superior cross modulation characteristics.
⢠High gain; (PG = 28 dB typ. at f = 200 MHz)
⢠Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
⢠Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
⢠Provide mini mold packages; MPAK-4(SOT-143mod)
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Note: 1. Marking is âEWââ.
2. BB305M is individual type number of HITACHI BBFET.
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