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2SK1831 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK1831, 2SK1832
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max
Drain to source
breakdown
voltage
K1831
K1832
V(BR)DSS
450
â
â
500 â
â
Gate to source breakdown
V(BR)GSS
±30
â
â
voltage
Gate to source leak current IGSS
Zero gate
K1831
I DSS
voltage drain
current
K1832
â
â
±10
â
â
250
Gate to source cutoff voltage VGS(off)
2.0
â
3.0
Static drain to K1831
RDS(on)
â
0.6
0.8
source on state K1832
resistance
â
0.7
0.9
Forward transfer admittance |yfs|
4.0
7.0
â
Input capacitance
Ciss
â
Output capacitance
Coss â
Reverse transfer capacitance Crss
â
Turn-on delay time
t d(on)
â
Rise time
tr
â
Turn-off delay time
t d(off)
â
Fall time
tf
â
Body to drain diode forward VDF
â
voltage
Body to drain diode reverse trr
â
recovery time
Notes 1. Pulse Test
1050 â
280 â
40
â
15
â
60
â
90
â
45
â
1.0
â
350 â
Unit
V
V
µA
µA
V
â¦
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 5 A
VGS = 10 V*1
ID = 5 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 5 A
VGS = 10 V
RL = 6 â¦
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0,
diF / dt = 100 A / µs
See characteristic curves of 2SK1157, 2SK1158
3
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