2SK1764 Datasheet, PDF (3/5 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Maximum Channel Power
Dissipation Curve
1.6
1.2
0.8
0.4
0
50
100 150 200
Ambient Temperature Ta (°C)
2SK1764
Safe Operation Area
10
3
1.0
0.3
0.1
Optehriasltiimaornieteaindisby ^{R DS(on)}
DC
operation
0.03
Ta = 25°C
0.01
0.1 0.3 1.0 3 10 30 100
Drain to Source Voltage V_DS (V)
3