2SK1764 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1764
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
V_DSS
60
Gate to source voltage
V_GSS
±20
Drain current
I_D
2
Drain peak current
I *1
D(pulse)
4
Body to drain diode reverse drain current
I _DR
4
Channel power dissipation
Pch*²
1
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 %
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
3. Marking is "KY".
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source breakdown
V_(BR)DSS
60
—
voltage
Gate to source breakdown
voltage
V_(BR)GSS
±20
—
Gate to source cutoff voltage V_GS(off)
1
—
Drain to source cutoff current I_DSS
—
—
Gate to source cutoff current I_GSS
—
—
Static drain to source on state R_DS(on)1 —
0.3
resistance
Static drain to source on state R_DS(on)2 —
0.4
resistance
Forward transfer admittance |y_fs|
0.9 1.7
Input capacitance
Ciss
—
140
Output capacitance
Coss —
75
Reverse transfer capacitance Crss
—
20
Turn on time
Turn off time
Note 1. Pulse Test
t _on
—
18
t _off
—
80
Max Unit
—
V
—
V
2
V
10
µA
±5
µA
0.45 Ω
0.60 Ω
—
S
—
pF
—
pF
—
pF
—
ns
—
ns
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_DS = 10 V, I_D = 1 mA
V_DS = 50 V, V_GS = 0
V_GS = ±15 V, V_DS = 0
V_GS = 10 V
I_D = 1 A*¹
V_GS = 4 V
I_D = 1 A*¹
V_DS = 10 V
I_D = 1 A*¹
V_DS = 10 V
V_GS = 0
f = 1 MHz
V_DS = 10 V, I_D = 1 A*¹
R_L = 30 Ω
See characteristics curves of 2SK975
2