2SK1625 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1625(L), 2SK1625(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS 600
Gate to source breakdown
voltage
V_(BR)GSS ±30
Gate to source leak current
I _GSS
—
Zero gate voltage drain current I_DSS
—
Gate to source cutoff voltage V_GS(off) 2.0
Static Drain to source on state R_DS(on) —
resistance
Forward transfer admittance |yfs|
4.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body to drain diode forward V_DF
—
voltage
Body to drain diode reverse t_rr
—
recovery time
Note 1. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
±10 µA
—
250 µA
—
3.0
V
0.9
1.3
Ω
6.5
—
S
1180 —
pF
265 —
pF
50
—
pF
15
—
ns
50
—
ns
105 —
ns
45
—
ns
0.9
—
V
370 —
ns
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±25 V, V_DS = 0
V_DS = 500 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 4 A, V_GS = 10 V *¹
I_D = 4 A, V_DS = 10 V *¹
V_DS = 10 V, V_GS = 0,
f = 1 MHz
I_D = 4 A, V_GS = 10 V,
R_L = 7.5 Ω
I_F = 7 A, V_GS = 0
I_F = 7 A, V_GS = 0,
di_F/dt = 100 A/µs
See characteristic curves of 2SK1403.
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