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2SK1305 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK1305
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 100
Gate to source breakdown
voltage
V(BR)GSS ±20
Gate to source leak current
I GSS
â
Zero gate voltage drain current IDSS
â
Gate to source cutoff voltage VGS(off) 1.0
Static drain to source on state RDS(on) â
resistance
â
Forward transfer admittance |yfs|
4.5
Input capacitance
Ciss â
Output capacitance
Coss â
Reverse transfer capacitance Crss â
Turn-on delay time
t d(on)
â
Rise time
tr
â
Turn-off delay time
t d(off)
â
Fall time
tf
â
Body to drain diode forward VDF
â
voltage
Body to drain diode reverse trr
â
recovery time
Note: 1. Pulse test
Typ Max Unit
â
â
V
â
â
V
â
±10 µA
â
250 µA
â
2.0
V
0.20 0.25 â¦
0.25 0.35 â¦
7.0
â
S
525 â
pF
205 â
pF
60
â
pF
5
â
ns
50
â
ns
170 â
ns
75
â
ns
1.2
â
V
220 â
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 5 A, VGS = 10 V *1
ID = 5 A, VGS = 4 V *1
ID = 5 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 5 A, VGS = 10 V,
RL = 6 â¦
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0,
diF/dt = 50 A/µs
See characteristic curves of 2SK1300.
3
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