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2SK1305 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK1305
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ⤠10 µs, duty cycle ⤠1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
Unit
100
V
±20
V
10
A
40
A
10
A
25
W
150
°C
â55 to +150
°C
2
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