2SJ361 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ361
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS –20
Gate to source breakdown
voltage
V_(BR)GSS ±20
Gate to source leak current
I _GSS
Zero gate voltage drain current I_DSS
Gate to source cutoff voltage V_GS(off)
Static drain to source on state R_DS(on)
resistance
—
—
–0.5
—
—
Forward transfer admittance |y_fs|
Input capacitance
Ciss
0.15
—
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body to drain diode forward V_DF
—
voltage
Body to drain diode reverse t_rr
—
recovery time
Note: 1. Pulse test
Typ Max
—
—
—
—
—
±10
—
–10
—
–1.5
0.28 0.4
0.85 1.5
0.3
—
3.2
—
130 —
0.6
—
350 —
1650 —
7280 —
6950 —
–1.0 —
530 —
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I_D = –10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = –16 V, V_GS = 0
I_D = –1 mA, V_DS = –10 V
I_D = –1 A, V_GS = –10 V
I_D = –0.4 A, V_GS = –2.5 V
I_D = –1 A, V_DS = –10 V
V_DS = –10 V, V_GS = 0,
f = 1 MHz
I_D = –1 A, V_GS = –10 V,
R_L = 10 Ω
I_F = –2 A, V_GS = 0
I_F = –2 A, V_GS = 0,
di_F/dt = 20 A/µs
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