2SJ361 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ361
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 2.5 V gate drive device can be driven from 3 V source
Outline
UPAK
G
21
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S