2SD2256 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Maximum Collector Dissipation Curve
120
80
40
0
50
100
150
Case temperature T_C (°C)
2SD2256
Area of Safe Operation
100
i_C(peak)
30
I_C(max)
10
3
1.0
Ta = 25°C
0.3 _{1 shot pulse}
0.1
3
10
30
100
300
Collector to emitter voltage V_CE (V)
Typical Output Characteristics
20
4.03.5 _3.0
16 T_C = 25°C
2.5
2.0
12
1.5
8
4
1.0 mA
I_B = 0
0
1
2
3
4
5
Collector to emitter voltage V_CE (V)
10,000
3,000
1,000
DC Current Transfer Ratio
vs. Collector Current
T ^{C= 725–5°}₂^°CC5_°C
300
V_CE = 4 V
100
30
10
0.1 0.3 1.0 3
10 30 100
Collector current I_C (A)
3