2SD2256 Datasheet, PDF(2/6 Page) Hitachi Semiconductor

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2SD2256 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

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2SD2256

Absolute Maximum Ratings (Ta = 25Â°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

C to E diode forward current

Note: 1. Value at TC = 25Â°C.

Symbol

VCBO

VCEO

VEBO

I C(peak)

PC * 1

Tstg

ID*1

Ratings

Unit

120

150

Â°C

â55 to +150

Â°C

Electrical Characteristics (Ta = 25Â°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 120 â

voltage

Collector to emitter breakdown V(BR)CEO 120 â

voltage

Collector to emitter sustain

voltage

VCEO(sus)

120

Emitter to base breakdown

V(BR)EBO

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

Base to emitter saturation

voltage

Note: 1. Pulse test.

I CBO

I CEO

hFE1

hFE2

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

2000 â

500

Max Unit

ÂµA

20000

2.0 V

3.5 V

3.0 V

4.5 V

Test conditions

IC = 0.1 mA, IE = 0

IC = 25 mA, RBE = â

IC = 200 mA, RBE = â

IE = 50 mA, IC = 0

VCB = 100 V, IE = 0

VCE = 100 V, RBE = â

VCE = 4 V, IC = 12 A*1

VCE = 4 V, IC = 25 A*1

IC = 12 A, IB = 24 mA*1

IC = 25 A, IB = 250 mA*1

IC = 12 A, IB = 24 mA*1

IC = 25 A, IB = 250 mA*1

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