2SD1163 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature T_C (°C)
Typical Output Characteristics
1.0
12
10 ^{TC = 25°C}
0.8
8
0.6
6
0.4
4
0.2
2 mA
I_B = 0
0
2
4
6
8
10
Collector to emitter voltage V_CE (V)
2SD1163, 2SD1163A
Area of Safe Operation
50
30
(40 V, 20 A)
10
3
1.0
(120 V, 0.9 A)
0.3
(150 V, 0.5 A)
2SD1163 2SD1163A
0.01
(350 V, 5 mA)
10
30
100
300
1,000
Collector to emitter voltage V_CE (V)
DC Current Transfer Ratio
vs. Collector Current
500
V_CE = 5 V
200
100
T_C = 75°C
50
25°C
–25°C
20
10
5
0.1 0.2
0.5 1.0 2
5 10
Collector current I_C (A)
3