2SD1163 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

2SD1163, 2SD1163A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector surge current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at T_C = 25°C.
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_{C (peak)}
I_{C (surge)}
P_C * ¹
Tj
Tstg
Rating
2SD1163
2SD1163A
Unit
300
350
V
120
150
V
6
6
V
7
7
A
10
10
A
20
20
A
40
40
W
150
150
°C
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Collector cutoff current I_CBO
Collector to emitter
breakdown voltage
V_(BR)CEO
Emitter to base
breakdown voltage
V_(BR)EBO
DC current transfer ratio h_FE
Collector to emitter
saturation voltage
V_{CE (sat)}
Base to emitter
saturation voltage
V_{BE (sat)}
Fall time
t_f
Note: 1. Pulse test.
2SD1163
Min Typ
——
——
120 —
6—
25 —
——
——
——
Max
5
—
—
—
—
2.0
1.2
0.5
2SD1163A
Min Typ
——
——
150 —
6—
25 —
——
——
——
Max
—
5
—
—
—
1.0
1.2
0.5
Unit
mA
mA
V
V
V
V
µs
Test conditions
V_CB = 300 V, I_E = 0
V_CB = 350 V, I_E = 0
I_C = 10 mA, R_BE = ∞
I_E = 10 mA, I_C = 0
V_CE = 5 V, I_C = 5 A*¹
I_C = 5 A, I_B = 0.5 A*¹
I_C = 5 A, I_B = 0.5 A*¹
I_CP = 3.5 A,
I_B1 = 0.45 A
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