2SD1133 Datasheet, PDF (3/5 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Typical Output Characteristics
5
T_C = 25°C
4
90
80
70
60
3
50
40
30
2
20
10 mA
1
I_B = 0
0
2
4
6
8 10
Collector to emitter voltage V_CE (V)
2SD1133, 2SD1134
Typical Transfer Characteristics
5
2
V_CE = 4 V
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base to emitter voltage V_BE (V)
1,000
500
200
100
50
DC Current Transfer Ratio
vs. Collector Current
V_CE = 4 V
T_C = 75°C
25
–25
20
10
5
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5
Collector current I_C (A)
Collector to Emitter Saturation Voltage
vs. Collector Current
1.4
1.2
I_C = 10 I_B
1.0
0.8
0.6
T_C = 75°C
0.4
25
0.2
–25
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2
5
Collector current I_C (A)
3