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2SD1133 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused | |||
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2SD1133, 2SD1134
Electrical Characteristics (Ta = 25°C)
2SD1133
2SD1134
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
70
â
â
70
â
â
V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
50
â
â
60
â
â
V
IC = 50 mA, RBE = â
Emitter to base
breakdown voltage
V(BR)EBO
5
ââ5
ââV
IE = 10 µA, IC = 0
Collector cutoff current ICBO
â â1
â â1
µA VCB = 50 V, IE = 0
DC current transfer ratio hFE1*1
60 â 320 60 â 320
VCE = 4V IC = 1 A*2
hFE2
35 â â 35 â â
IC = 0.1 A*2
Collector to emitter
saturation voltage
VCE(sat)
â
â
1
â â1
V
IC = 2 A, IB = 0.2 A*2
Base to emitter voltage VBE
â â1 â â1
Gain bandwidth product fT
â 7 ââ 7 â
Notes: 1. The 2SD1133 and 2SD1134 are grouped by hFE1 as follows.
2. Pulse test.
V
VCE = 4 V, IC = 1 A*2
MHz VCE = 4 V, IC = 0.5 A*2
B
60 to 120
C
D
100 to 200 160 to 320
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature TC (°C)
Area of Safe Operation
5
(10 V, 4 A)
2
ICmax(Continuous)
(20 V,
2
DC
A)
Operation
1.0
(TC = 25°C)
0.5
(50 V, 0.24 A)
0.2
(60 V, 0.15 A)
0.1
0.05
1
2SD1133
2SD1134
2
5 10 20 50 100
Collector to emitter voltage VCE (V)
2
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