2SD1126 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Maximum Collector Dissipation Curve
60
40
20
0
50
100
150
Case temperature T_C (°C)
Typical Output Characteristics
10
2.0
8 ^{TC = 25°C}
1.5
1.0
6
0.8
0.7
4
0.6
0.5 mA
2
I_B = 0
0
1
2
3
4
5
Collector to emitter voltage V_CE (V)
2SD1126(K)
Area of Safe Operation
30 _{iC (peak)}
10
I_{C (max)}
3
1.0
0.3
T_C = 25°C
0.1
0.03
3
10
30
100
300
Collector to emitter voltage V_CE (V)
30,000
10,000
3,000
1,000
DC Current Transfer Ratio
vs. Collector Current
V_CE = 3 V
Pulse
= ^75°C
T C ₂₅
–25
300
100
30
0.3
1.0
3
10
30
Collector current I_C (A)
3