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2SD1126 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused
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2SD1126(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
ID
Ratings
Unit
120
V
120
V
7
V
10
A
15
A
50
W
150
°C
–55 to +150
°C
10
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO 120 —
voltage
Emitter to base breakdown
V(BR)EBO
7
—
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
Turn off time
Note: 1. Pulse test.
I CBO
I CEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VD
t on
t off
—
—
—
—
1000 —
—
—
—
—
—
—
—
—
—
—
—
0.8
—
8.0
Max Unit
—
V
—
V
100 µA
10
µA
2000
1.5 V
3.0 V
2.0 V
3.5 V
3.0 V
—
µs
—
µs
Test conditions
IC = 25 mA, RBE = ∞
IE = 200 mA, IC = 0
VCB = 120 V, IE = 0
VCE = 100 V, RBE = ∞
VCE = 3 V, IC = 5 A*1
IC = 5 A, IB = 10 mA*1
IC = 10 A, IB = 0.1 A*1
IC = 5 A, IB = 10 mA*1
IC = 10 A, IB = 0.1 A*1
ID = 10 A*1
IC = 5 A, IB1 = –IB2 = 10 mA
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