2SD1115 Datasheet, PDF (3/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Typical Output Characteristics
5
T_C = 25°C
4
1.0
0.8
0.6
3
0.4
2
0.2 ^mA
1
I_B = 0
0
1
2
3
4
5
Collector to emitter voltage V_CE (V)
10,000
DC Current Transfer Ratio
vs. Collector Current
5,000
2,000
1,000
= ^75°C
T ^C ₂₅
–25
500
200
100
0.1 0.2
V_CE = 2 V
Pulse
0.5 1.0 2
5 10
Collector current I_C (A)
Saturation Voltage vs. Collector Current
10
l_C = 100 l_B
5
T_C = 25°C
Pulse
2
V_{BE (sat)}
1.0
V_{CE (sat)}
0.5
0.2
0.1
0.1 0.2 0.5 1.0 2
5 10
Collector current I_C (A)
2SD1115(K)
3