2SD1115 Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

2SD1115(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V_(BR)CBO 400
—
voltage
Collector to emitter sustain
V_CEO(sus)
300
—
voltage
Emitter to base breakdown
V_(BR)EBO
7
—
voltage
Collector cutoff current
I_CEO
—
—
DC current transfer ratio
h_FE
500 —
Collector to emitter saturation V_CE(sat)
—
—
voltage
Base to emitter saturation
V_BE(sat)
—
—
voltage
Turn on time
Turn off time
Note: 1. Pulse test.
t_on
—
1.0
t_off
—
22
Max
—
—
—
100
—
1.5
2.0
—
—
Unit
V
Test conditions
I_C = 0.1 mA, I_E = 0
V
I_C = 2 A, PW = 50 µs,
f = 50 Hz, L = 10 mH
V
I_E = 50 mA, I_C = 0
µA
V_CE = 300 V, R_BE = ∞
V_CE = 2 V, I_C = 2 A*¹
V
I_C = 2 A, I_B = 20 mA*¹
V
µs
I_C = 2 A, I_B1 = –I_B2 = 20 mA
µs
Maximum Collector Dissipation Curve
60
40
20
0
50
100
150
Case temperature T_C (°C)
Area of Safe Operation
10
3
i_{C (peak)}
I_{C (max)}
Ta = 25°C
1.0
0.3
0.1
0.03
0.01
0.003
0.005
0.5 1.0 2 5 10 20 50 100200 500
Collector to emitter voltage V_CE (V)
2