2SC4046 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

Typical Output Characteristics
100
120
80
100
60
80
60
40
40
20
20 µA
I_B = 0
0
4
8
12 18 20
Collector to emitter Voltage V_CE (V)
Base to Emitter Voltage
vs. Collector Current
10
V_CE = 10 V
Pulse Test
1.0
Ta = –25°C
75
25
0.1
1
10
100
Collector current I_C (mA)
1,000
2SC4046
1,000
DC Current Transfer Ratio vs.
Collector Current
Ta = 75°C
100
–25 25
10
V_CE = 10 V
Pulse Test
1
10
100
Collector current I_C (mA)
1,000
Collector to Emitter Saturation
Voltage vs. Collector Current
10
I_C/I_B = 10
Pulse Test
1.0
Ta = 75°C
25
0.1
–25
0.01
1
10
100
Collector current I_C (mA)
1,000
3