2SC4046 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4046
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V_(BR)CBO 120 —
voltage
Collector to emitter breakdown V_(BR)CEO 120 —
voltage
Emitter to base breakdown
V_(BR)EBO
5
—
voltage
Collector cutoff current
I _CBO
—
—
DC current transfer ratio
h_FE*¹
250 —
Base to emitter voltage
V_BE
—
—
Collector to emitter saturation V_CE(sat)
—
—
voltage
Gain bandwidth product
f_T
—
350
Collector output capacitance Cob
—
3.5
Note: 1. The 2SC4046 is grouped by h_FE as follows.
Max Unit Test conditions
—
V
I_C = 10 µA, I_E = 0
—
V
I_C = 1 mA, R_BE = ∞
—
V
I_E = 10 µA, I_C = 0
10
µA
800
1.0 V
1.0 V
V_CB = 80 V, I_E = 0
V_CE = 5 V, I_C = 10 mA
I_C = 200 mA, I_B = 20 mA
—
MHz V_CE = 10 V, I_C = 50 mA
—
pF
V_CB = 30 V, f = 1 MHz, I_E = 0
Grade
h_FE
D
E
250 to 500 400 to 800
Maximum Collector Dissipation Curve
12
10
8
6
4
2
0
50
100
150
Case Temperature T_C (°C)
Area of Safe Operation
1.0
Single Pulse
Ta = 25°C
(25 V, 0.4 A)
(80 V, 0.125 A)
DC Operation
0.1 ^{TC = 25°C}
(80 V, 0.1 A)
(120 V, 0.055 A)
(120 V, 0.05 A)
0.01
1
10
100
1,000
Collector to emitter Voltage V_CE (V)
2