2SC2610 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Maximum Collector Dissipation Curve
800
600
400
200
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
100
50
V_CE = 20 V
20
10
5
2
1
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage V_BE (V)
2SC2610
Typical Output Characteristics
1.0
16
14
0.8
12
10
0.6
8
0.4
6
4
0.2
2 µA
I_B = 0
0
0.4 0.8 1.2 1.6 2.0
Collector to Emitter Voltage V_CE (V)
DC Current Transfer Ratio vs.
Collector Current
100
80 Ta ^{= 75°C}
25
V_CE = 20 V
Pulse
–25
60
40
20
0
12
5 10 20 50 100
Collector Current I_C (mA)
3