2SC2610 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

2SC2610
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
Tj
Tstg
Ratings
Unit
300
V
300
V
5
V
100
mA
800
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V_(BR)CBO 300 —
voltage
Collector to emitter breakdown V_(BR)CEO 300 —
voltage
Emitter to base breakdown
V_(BR)EBO
5
—
voltage
Collector cutoff current
I _CEO
—
—
DC current transfer ratio
h_FE
30
—
Collector to emitter saturation V_CE(sat)
—
—
voltage
Gain bandwidth product
f_T
50
80
Collector output capacitance Cob
—
—
Max Unit Test conditions
—
V
I_C = 10 µA, I_E = 0
—
V
I_C = 1 mA, R_BE = ∞
—
V
I_E = 10 µA, I_C = 0
1.0 µA
200
1.5 V
V_CE = 250 V, R_BE = ∞
V_CE = 20 V, I_C = 20 mA
I_C = 20 mA, I_B = 2 mA
—
MHz V_CE = 20 V, I_C = 20 mA
4.0 pF
V_CB = 20 V, I_E = 0, f = 1 MHz
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