2SC2324 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

Typical Output Characteristics
2.0
T_C = 25°C
1.6
0.5 ^0.4
0.3
0.2
1.2
0.1 ^mA
0.8
0.4
I_B = 0
0
1
2
3
4
5
Collector to emitter Voltage V_CE (V)
2SC2324(K)
DC Current Transfer Ratio vs.
Collector Current
10⁵
V_CE = 10 V
Pulse
Ta = 75°C
25
–25
10⁴
10³
10
20
50 100 200 500 1,000
Collector current I_C (mA)
Saturation Voltage vs. Collector Current
10
l_C/l_B = 1,000
5 Pulse
Ta = –25°C
25
75
2
V_{BE (sat)}
1.0
0.5
V_{CE (sat)}
25 ⁷⁵
0.2
Ta = –25°C
0.1
10
20
50 100 200 500 1,000
Collector current I_C (mA)
Switching Time vs. Collector Current
10
3
1.0
0.3
0.1
0.03
0.01
0.01
t_stg
t_f
t_on
Ta = 25°C
V_CC = 12 V
I_CC = 500 I_B1 = –500 I_B2
0.03
0.1
0.3
1.0
Collector current I_C (A)
3