2SC2324 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC2324(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V_(BR)CEO 60
—
voltage
Emitter to base breakdown
V_(BR)EBO
7
—
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I _CBO
h_FE
V_CE(sat)
—
—
2000 —
—
—
Base to emitter saturation
V_BE(sat)
—
—
voltage
Turn on time
Turn off time
Note: 1. Pulse test.
t _on
—
100
t _off
—
600
Max Unit
—
V
—
V
10
µA
—
1.5 V
2.0 V
—
ns
—
ns
Test conditions
I_C = 1 mA, R_BE = ∞
I_E = 0.1 mA, I_C = 0
V_CB = 60 V, I_E = 0
V_CE = 10 V, I_C = 500 mA*¹
I_C = 500 mA, I_B = 0.5 mA*¹
V_CC = 12 V
I_C = 250 mA, I_B1 = –I_B2 = 5 mA
Maximum Collector Dissipation Curve
10
8
6
4
2
0
50
100
150
200
Case Temperature T_C (°C)
Area of Safe Operation
3 _{iC (peak)}
I_{C (max)}
1.0
Ta = 25°C
1 Shot Pulse
DC (T_C = 25°C)
0.3
0.1
0.03
12
5 10 20
50 100
Collector to emitter Voltage V_CE (V)
2