2SA673 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Maximum Collector Dissipation Curve
600
400
200
0
50
100
150
Ambient Temperature Ta (°C)
–500
Typical Output Characteristics (2)
–400
–300
–7
–6
–5
–4
–3
–200
–2
–100
0
–1 mA
P_C = 400 mW
I_B = 0
–2 –4 –6 –8 –10
Collector to Emitter Voltage V_CE (V)
2SA673, 2SA673A
–100
–80
–60
–40
–20
0
Typical Output Characteristics (1)
–1.0 _–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1 mA
I_B = 0
–2 –4 –6 –8 –10
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
–30
V_CE = –3 V
–10
–3
–1.0
–0.3
0 –0.2 –0.4 –0.6 –0.8 –1.0
Base to Emitter Voltage V_BE (V)
3