2SA673 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

2SA673, 2SA673A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
Tj
Tstg
2SA673
2SA673A
Unit
–35
–50
V
–35
–50
V
–4
–4
V
–500
–500
mA
400
400
mW
150
150
°C
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SA673
2SA673A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V_(BR)CBO
–35 —
—
–50 —
—V
I_C = –10 µA, I_E = 0
Collector to emitter
breakdown voltage
V_(BR)CEO
–35 —
—
–50 —
—V
I_C = –1 mA, R_BE = ∞
Emitter to base
breakdown voltage
V_(BR)EBO
–4
—
—
–4
—
—V
I_E = –10 µA, I_C = 0
Collector cutoff current I_CBO
Collector to emitter
saturation voltage
V_CE(sat)
DC current trnsfer ratio h_FE*¹
— — –0.5 —
— –0.2 –0.6 —
60 — 320 60
— –0.5 µA
–0.2 –0.6 V
— 320
DC current trnsfer ratio h_FE
10 — — 10 — —
Base to emitter voltage V_BE
— –0.64 — — –0.64 — V
Notes: 1. The 2SA673 and 2SA673A are grouped by h_FE as follows.
2. Pulse test
B
C
D
V_CB = –20 V, I_E = 0
I_C = –150 mA,
I_B = –15 mA*²
V_CE = –3 V,
I_C = –10 mA
V_CE = –3 V,
I_C = –500 mA*²
V_CE = –3 V,
I_C =–10 mA
60 to 120 100 to 200 160 to 320
2