1SS106 Datasheet, PDF (3/5 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

Main Characteristic
10^-1
10^-2
10^-3
10^-4
10^-5
0
0.4 0.8 1.2 1.6 2.0
Forward voltage V _F (V)
Fig.1 Forward current Vs. Forward voltage
f=1MHz
10
1.0
-1
10
10^-1
1.0
10
Reverse voltage V _R (V)
Fig.3 Capacitance Vs. Reverse voltage
1SS106
10^-2
10^-3
10^-4
10^-5
10^-6
0
2
4
6
8
10
Reverse voltage V _R (V)
Fig.2 Reverse current Vs. Reverse voltage
100
80
60
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Input voltage Vin (Vrms)
Fig.4 Rectifier efficiency Vs. Input voltage Vin
3