1SS106 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

1SS106
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Average rectified current
Junction temperature
Storage temperature
Symbol
V_R
I_O
Tj
Tstg
Value
Unit
10
V
30
mA
125
°C
–55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Forward current
I_F
Reverse current
I_R
Capacitance
C
Rectifier efficiency
η
ESD-Capability ^*1
—
4.5 —
—
—
—
—
70
—
100 —
—
mA
V_F = 1V
70
µA
V_R = 6V
1.5
pF
V_R = 1V, f = 1MHz
—
%
Vin = 2Vrms, f = 40MHz, R_L = 5kΩ,
C_L = 20pF
—
V
C = 200pF, Both forward and
reverse direction 1 pulse.
Notes: 1. Failure criterion; I_R ≥ 140µA at V_R = 6V
2