BB502C Datasheet, PDF (2/13 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB502C
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
V_DS
V_G1S
Gate2 to source voltage
V_G2S
Drain current
I_D
Channel power dissipation
Pch
Channel temperature
Tch
Storage temperature
Tstg
Ratings
Unit
6
V
+6
V
−0
+6
V
−0
20
mA
100
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown V_(BR)DSS
6
voltage
Gate1 to source breakdown V_(BR)G1SS
+6
voltage
Gate2 to source breakdown V_(BR)G2SS
+6
voltage
Gate1 to source cutoff current I_G1SS
—
Gate2 to source cutoff current I_G2SS
—
Gate1 to source cutoff voltage V_G1S(off)
0.5
Gate2 to source cutoff voltage V_G2S(off)
0.5
Drain current
I _D(op)
8
Forward transfer admittance |y_fs|
20
Input capacitance
c _iss
1.4
Output capacitance
c _oss
0.7
Reverse transfer capacitance c_rss
—
Power gain
PG
17
Noise figure
NF
—
Typ
—
—
—
—
—
0.7
0.7
11
25
1.7
1.1
0.02
22
1.6
Max Unit
—
V
—
V
—
V
+100 nA
+100 nA
1.0
V
1.0
V
14
mA
30
mS
2.0
pF
1.5
pF
0.05 pF
—
dB
2.2
dB
Test Conditions
I_D = 200µA
V_G1S = V_G2S = 0
I_G1 = +10µA
V_G2S = V_DS = 0
I_G2 = +10µA
V_G1S = V_DS = 0
V_G1S = +5V
V_G2S = V_DS = 0
V_G2S = +5V
V_G1S = V_DS = 0
V_DS = 5V, V_G2S = 4V
I_D = 100µA
V_DS = 5V, V_G1S = 5V
I_D = 100µA
V_DS = 5V, V_G1 = 5V
V_G2S = 4V, R_G = 180kΩ
V_DS = 5V, V_G1 = 5V
V_G2S =4V
R_G = 180kΩ, f = 1kHz
V_DS = 5V, V_G1 = 5V
V_G2S =4V, R_G = 180kΩ
f = 1MHz
V_DS = 5V, V_G1 = 5V
V_G2S =4V, R_G = 180kΩ
f = 900MHz
2