BB303M Datasheet, PDF (2/14 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

BB303M
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
7
Gate1 to source breakdown
voltage
Gate2 to source breakdown
voltage
Gate1 to source cutoff current
V_(BR)G1SS
+7
V_(BR)G2SS
+7
I _G1SS
—
Gate2 to source cutoff current
I _G2SS
—
Gate1 to source cutoff voltage
V_G1S(off)
0.3
Gate2 to source cutoff voltage
V_G2S(off)
0.5
Drain current
I _D(op)
9
Forward transfer admittance
|y_fs|
35
Input capacitance
c _iss
2.6
Output capacitance
c _oss
1.7
Reverse transfer capacitance
c _rss
—
Power gain
PG1
28
Noise figure
Power gain
NF1
—
PG2
12
Noise figure
NF2
—
Typ
Max Unit
—
—
V
—
—
V
—
—
V
—
+100 nA
—
+100 nA
0.6
0.9
V
0.8
1.1
V
14
20
mA
42
50
mS
3.3
4.0
pF
2.1
2.5
pF
0.025 0.05 pF
32
—
dB
1.0
1.6
dB
16.5 —
dB
2.85 3.7
dB
Test Conditions
I_D = 200µA
V_G1S = V_G2S = 0
I_G1 = +10µA
V_G2S = V_DS = 0
I_G2 = +10µA
V_G1S = V_DS = 0
V_G1S = +5V
V_G2S = V_DS = 0
V_G2S = +5V
V_G1S = V_DS = 0
V_DS = 5V, V_G2S = 4V
I_D = 100µA
V_DS = 5V, V_G1S = 5V
I_D = 100µA
V_DS = 5V, V_G1 = 5V
V_G2S = 4V, R_G = 470kΩ
V_DS = 5V, V_G1 = 5V
V_G2S =4V
R_G = 470kΩ, f = 1kHz
V_DS = 5V, V_G1 = 5V
V_G2S =4V, R_G = 470kΩ
f = 1MHz
V_DS = 5V, V_G1 = 5V
V_G2S =4V, R_G = 470kΩ
f = 200MHz
V_DS = 5V, V_G1 = 5V
V_G2S =4V, R_G = 470kΩ
f = 900MHz
2