BB303M Datasheet, PDF (1/14 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

BB303M
Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-697A (Z)
2nd. Edition
Nov. 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High forward transfer admittance;
(|yfs| = 42 mS typ. at f = 1 kHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4 (SOT-143 var.)
Outline
Notes: 1. Marking is “CW–”.
2. BB303M is individual type number of HITACHI BBFET.
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
Unit
7
V
– 0/ +7
V
– 0/ +7
V
25
mA
150
mW
150
°C
–55 to +150
°C