3SK321 Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK321
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
V_DS
12
V
V_G1S
±8
V
V_G2S
±8
V
I_D
25
mA
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source breakdown
V_(BR)DSX
12
—
voltage
Gate 1 to source breakdown V_(BR)G1SS ±8
—
voltage
Gate 2 to source breakdown V_{(BR) G2SS} ±8
—
voltage
Gate 1 cutoff current
Gate 2 cutoff current
Drain current
I _G1SS
I _G2SS
I _DS(on)
—
—
—
—
0.5 —
Gate 1 to source cutoff voltage V_G1S(off) –0.5 —
Gate 2 to source cutoff voltage V_G2S(off) 0
—
Forward transfer admittance |y_fs|
16
20.8
Input capacitance
Ciss
1.2 1.5
Output capacitance
Coss 0.6 0.9
Reverse transfer capacitance Crss
—
0.01
Power gain
PG
16
19.5
Noise figure
NF
—
2.0
Note: Marking is “ZX–”
Max Unit
—
V
—
V
—
V
±100 nA
±100 nA
10
mA
+0.5 V
+1.0 V
—
mS
2.2 pF
1.2 pF
0.03 pF
—
dB
3
dB
Test conditions
I_D = 200 µA , V_G1S = –3 V,
V_G2S = –3 V
I_G1 = ±10 µA, V_G2S = V_DS = 0
I_G2 = ±10 µA, V_G1S = V_DS = 0
V_G1S = ±6 V, V_G2S = V_DS = 0
V_G2S = ±6 V, V_G1S = V_DS = 0
V_DS = 6 V, V_G1S = 0.5V,
V_G2S = 3 V
V_DS = 10 V, V_G2S = 3V,
I_D = 100 µA
V_DS = 10 V, V_G1S = 3V,
I_D = 100 µA
V_DS = 6 V, V_G2S = 3V,
I_D = 10 mA, f = 1 kHz
V_DS = 6 V, V_G2S = 3V,
I_D = 10 mA, f = 1 MHz
V_DS = 4 V, V_G2S = 3V,
I_D = 10 mA, f = 900 MHz
2