3SK321 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK321
Silicon N-Channel Dual Gate MOS FET
Application
UHF RF amplifier
Features
• Low noise figure.
NF = 2.0 dB typ. at f = 900 MHz
• Capable of low voltage operation
• Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
ADE-208-711A (Z)
2nd. Edition
Dec. 1998