3SK239A Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – GaAs Dual Gate MES FET

3SK239A
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
Unit
12
V
–6
V
–6
V
50
mA
100
mW
125
°C
–55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max
Drain to source leakage current I_DSX
—
—
50
Gate 1 to source breakdown
voltage
V_(BR)G1SS –6
Gate 2 to source breakdown
voltage
V_(BR)G2SS –6
Gate 1 leakage current
I _G1SS
—
Gate 2 leakage current
I _G2SS
—
Drain current
I _DSS
14
Gate 1 to source cutoff voltage V_G1S(off) —
—
—
—
—
—
–5
—
–5
19
28
–1.2 –1.6
Gate 2 to source cutoff voltage V_G2S(off) —
–1.2 –1.6
Forward transfer admittance |y_fs|
20
31
—
Input capacitance
Ciss
—
0.58 1.0
Output capacitance
Coss —
Reverse transfer capacitance Crss
—
Power gain
PG
17
0.36 0.6
0.028 0.05
19
—
Noise figure
NF
Note: Marking is “XR–”.
—
1.3
2.0
Unit
µA
V
V
µA
µA
mA
V
V
mS
pF
pF
pF
dB
dB
Test conditions
V_DS = 12 V, V_G1S = –3 V,
V_G2S = 0
I_G1 = –10 µA, V_G2S = V_DS = 0
I_G2 = –10 µA, V_G1S = V_DS = 0
V_G1S = –5 V, V_G2S = V_DS = 0
V_G2S = –5 V, V_G1S = V_DS = 0
V_DS = 5 V, V_G1S = V_G2S = 0
V_DS = 5 V, V_G2S = 0,
I_D = 100 µA
V_DS = 5 V, V_G1S = 0,
I_D = 100 µA
V_DS = 5 V, V_G2S = 1 V,
I_D = 10 mA, f = 1 kHz
V_DS = 5 V, V_G1S = V_G2S = –3 V,
f = 1 MHz
V_DS = 5 V, V_G2S = 1 V,
I_D = 10 mA, f = 900 MHz
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