3SK239A Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – GaAs Dual Gate MES FET

3SK239A
GaAs Dual Gate MES FET
Application
UHF RF amplifier
Features
• Excellent low noise characteristics
(NF = 1.3 dB Typ at f = 900 MHz)
• Capable of low voltage operation
Outline