2SK3174A Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET UHF Power Amplifier

2SK3174A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
V Note1
DSS
V
GSS
I_D
I
Note2
D(pulse)
Pch ^Note3
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. Pin=0, PW ≤ 0.1sec
2. PW ≤ 10ms, duty cycle ≤ 50 %
3. Value at Tc = 25°C
Ratings
Unit
60
V
±10
V
16
A
32
A
252
W
175
°C
–55 to +150
°C
Electrical Characteristics
(Tc = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions
Zero gate voltage drain current Note4 I
DSS
—
—
1
mA
V_DS = 60 V, V_GS = 0
Gate to source leak current ^Note4
I
GSS
—
—
±3
µA
V_GS = ±10 V, V_DS = 0
Gate to source cutoff voltage ^Note4
V_GS(off)
1.0
2.3
3.0
V
Forward transfer admittance ^{Note4 5}
|y |
fs
4.0
6.7
—
S
I_D = 1 mA, V_DS = 10 V
V_DS=10 V,
I
D
=
5
A
Note5
Input capacitance ^Note4
Ciss
—
162 —
pF
V_GS = 5 V, V_DS = 0
f = 1 MHz
Reverse transfer capacitance ^Note4 Crss
—
4
—
pF
V_DG = 10 V, V_GS = 0
f = 1 MHz
Output Power
Pout
200
270
—
W
V_DS = 28 V, I_DQ = 1.2 A
f = 860 MHz
Pin = 14 W
Drain Rational
ηD
—
64
—
%
V_DS = 28 V, I_DQ = 1.2 A
f = 860 MHz
Pin = 14 W
Note: 4. Shows 1 unit FET
5. Pulse Test
Rev.0, Aug. 2001, page 2 of 8