2SK3174A Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET UHF Power Amplifier

2SK3174A
Silicon N Channel MOS FET
UHF Power Amplifier
Features
• High power output, High gain, High efficiency
P1dB = 220 W , PG = 15.3dB , ηD = 61 % (at P1dB) typ. (f = 860MHz)
• Compact package
Suitable for push - pull circuit
Outline
RFPAK-F
D
D
G
G
4
5
S
1
ADE-208-1451 (Z)
1st. Edition
September 2001
3
2 _{1. Drain}
2. Drain
3. Source
4. Gate
5. Gate
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
In AC testing, the part should be mounted on heat sink with thermal compound.